K1
A2
K2
A1K2
G1
K2
G2
1
2
3
K1
A2
K2
A1K2
G1
K2
1
2
3
K1
A2
K2
A1K2
K2
G2
1
2
3
PK
PD
PE
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
PK
(PD,PE)
200GB
THYRISTOR MODULE
UL;E76102
M
92
12
18
M814
110TAB
2.8.0.5T
800.3
42max
34max
2
26
60
48
24
5
5
K1G1
K2G2
12
26
7
4-6M5
R8.0
33
52
Unit
A
Symbol
Item
Conditions
Ratings
200
Unit
I
T
AV
Average On-State Current
I
T
RMS
R.M.S. On-State Current
Single phase, half wave, 180
conduction, Tc74
Single phase, half wave, 180
conduction, Tc74
I
TSM
Surge On-State Current
I
2
t
I
2
t
P
GM
Peak Gate Power Dissipation
P
G
AV
Average Gate Power Dissipation
I
FGM
Peak Gate Current
V
FGM
Peak Gate Voltage
Forward
1
2
cycle, 50Hz/60Hz, peak Value, non-reqetitive
Value for one cycle of surge current
A
310
A
5000/5500
A
125000
10
A
2
S
W
3
V
RGM
Peak Gate Voltage
Reverse
di/dt
Critical Rate of Rise of On-State Current
I
G
100mATj25V
D
1
2
V
DRM
dI
G
/dt0.1A/s
V
ISO
Isolation Breakdown VoltageR.M.S.
Tj
Operating Junction Temperature
Tstg
Storage Temperature
Mounting
Torque
Mass
Mounting
M5
Terminal
M8
A.C. 1 minute
Recommended Value 1.5-2.5
15-25
Recommended Value 8.8-10
90-105
Typical Value
3
W
A
10
V
5
V
200
A/
s
2500
V
-40 to 125
-40 to 125
2.7
28
11
115
510
N
fB
g
Symbol
Item
Conditions
Ratings
50
Unit
I
DRM
Repetitive Peak Off-State Current, max.
I
RRM
Repetitive Peak Reverse Current, max.
at V
DRM
, Single phase, half wave, Tj
125
at V
DRM
, Single phase, half wave, Tj
125
V
TM
Peak On-State Voltage, max.
I
GT
/V
GT
Gate Trigger Current/Voltage, max.
V
GD
Non-Trigger Gate, Voltage. min.
tgt
Turn On Time, max.
dv/dt
Critical Rate of Rise of Off-State Voltage, min.
I
H
Holding Current, typ.
On-State Current 600A, Tj
125 Inst. measurement
Tj
25I
T
1AV
D
6V
mA
50
mA
1.50
V
100/3
Tj
125V
D
1
2
V
DRM
I
T
200AI
G
100mATj25, V
D
1
2
V
DRM
dI
G
/dt
0.1A/s
0.25
mA/V
V
10
Tj
125, V
D
2
3
V
DRM
, Exponential wave.
Tj
25
I
L
Lutching Current, typ.
Rth
j-cThermal Impedance, max.
Tj
25
Junction to case
500
s
V/
s
50
mA
100
mA
0.18
/W
Electrical Characteristics
Maximum Ratings
Symbol
Item
PK200GB40
PD200GB40
PE200GB40
Ratings
PK200GB80
PD200GB80
PE200GB80
Unit
V
RRM
Repetitive Peak Reverse Voltage
400
800
V
480
960
V
400
800
V
V
RSM
V
DRM
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Power Thyristor/Diode Module PK200GB series are designed for various rectifier
circuits and power controls. For your circuit application. following internal connections
and wide voltage ratings up to 800V are available.
markThyristor and Diode part. No markThyristor part
Isolated mounting base
I
T
AV
200A, I
T
RMS
310A, I
TSM
5500A
di/dt 200 A/
s
dv/dt 500V/
s
Applications
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
Static switches
Internal Configurations
PK(PD,PE)200GB
;;
Peak Gate Current
3
A
-
Peak Forward Gate Voltage10V
Ave
ra
ge G
ate
P
ow
er3
W
Peak Gate Current
3
A
Maximum Gate Non-Trigger Voltage3A
Pe
ak G
ate
Po
we
r1
0W
125
25
-30
Gate Characteristics
Gate CurrentmA
Peak Forward Gate Voltage10V
Pe
ak G
ate
P
ow
er
1
0W
Ave
ra
ge G
ate
P
ow
er3
W
Peak Gate Current
3
A
Maximum Gate Non-Trigger Voltage3A
Gate Voltage
V
Tj
On-State Characteristics
On-State VoltageV
On-State Current
A
Per one element
360
0
Conduction Angle
DC
Average On-State Current Vs Power Dissipation
Single phase half wave
Average On-State CurrentA
Per one element
360
0
Conduction Angle
DC
Power Dissipation
W
Average On-State Current Vs Maximum Allowable
Case TemperatureSingle phase half wave
Average On-state CurrentA
Per one element
360
0
Conduction Angle
DC
Allowable Case Temperature
= start
Per one element
Tj25 start
60Hz
50Hz
Surge On-State Current Rating
Non-Repetitive
Timecycles
Per one element
W3
Surge On-State Current
A
-
-
-
Transient Thermal Impedance
Time
t
sec
Junction to Case
Per one element
Maximum
Transient Thermal Impedance
j-c
/
W
Output Current
WBidirectional connection
Ambient Temperature
Output CurrentA
Total Power Dissipation
W
Allowable Case Temperature
Conduction Angle 180
W1:Bidirectional connection
B6
W3
Rth(f-a):
Thermal resistance
between fin ambient
Rth(f-a):0.5/W
Rth(f-a):0.4/W
Rth(f-a):0.3/W
Rth(f-a):0.2/W
Rth(f-a):0.1/W
Rth(f-a):0.05/W
I
D
Ar.m.s.
W1
BTwo Pluse bridge connection
Ambient Temperature
Ambient Temperature
BSix pulse bridge connection
Three phase
bidiretional connection
Allowable Case Temperature
Rth(f-a):0.5/W
Rth(f-a):0.4/W
Rth(f-a):0.3/W
Rth(f-a):0.2/W
Rth(f-a):0.1/W
Rth(f-a):0.05/W
Rth(f-a):0.5/W
Rth(f-a):0.4/W
Rth(f-a):0.3/W
Rth(f-a):0.2/W
Rth(f-a):0.1/W
Rth(f-a):0.05/W
W
IdAav.
W3
IdAr.m.s.
B6
IdAav.
PDF 
ZIP